DocumentCode :
2441153
Title :
Relationship between yield and reliability impact of plasma damage to gate oxide
Author :
Mason, P.W. ; DeBusk, D.K. ; McDaniel, J.K. ; Oates, AS ; Cheung, K.P.
Author_Institution :
Lucent Technol. Bell Labs., Orlando, FL, USA
fYear :
2000
fDate :
2000
Firstpage :
2
Lastpage :
5
Abstract :
We report a direct correlation between gate oxide damage measured on antenna testers and yield loss as well as reliability degradation on production chips. The relationship between the magnitude of the yield loss and the reliability failure is explored. We demonstrate, by modeling and by experimental verification, that plasma charging damage can generically cause yield loss and long term reliability degradation but has only minor impact on short-term reliability
Keywords :
integrated circuit reliability; integrated circuit yield; plasma materials processing; antenna tester; gate oxide; plasma damage; reliability; yield; Degradation; MOSFETs; Plasma applications; Plasma materials processing; Plasma measurements; Plasma temperature; Production; Radio frequency; Radiofrequency identification; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
Type :
conf
DOI :
10.1109/PPID.2000.870560
Filename :
870560
Link To Document :
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