Title :
Displacement damage analysis of single crystal 50 μm thick silicon solar cells
Author :
Yamaguchi, M. ; Taylor, S.J. ; Imaizumi, Masayuki ; Yang, M.J. ; Ito, Takao ; Matsuda, S. ; Hisamatsu, T.
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
fDate :
29 Sep-3 Oct 1997
Abstract :
The authors compare the effects of irradiation with various energies on the output characteristics of silicon solar cells by writing the particle fluence as a displacement damage dose. Using this method, the degradation to a given cell structure in any radiation environment can be estimated. In addition, they show that the evolution of cell parameters can be calculated quite accurately using PC-1D with consideration of only the combined effects of minority carrier lifetime reduction and carrier removal. As a result, the behavior of different cell structures can be estimated very quickly
Keywords :
carrier lifetime; electronic engineering computing; elemental semiconductors; minority carriers; radiation effects; semiconductor device models; silicon; software packages; solar cells; 50 mum; PC-1D; Si; carrier removal; cell structure degradation; displacement damage analysis; displacement damage dose; irradiation effects; minority carrier lifetime reduction; output characteristics; particle fluence; silicon solar cells; Charge carrier lifetime; Degradation; Electrons; Energy loss; Equations; Photovoltaic cells; Power generation; Protons; Silicon; Writing;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654254
