Displacement damage analysis of single crystal 50 μm thick silicon solar cells

Author

Yamaguchi, M. ; Taylor, S.J. ; Imaizumi, Masayuki ; Yang, M.J. ; Ito, Takao ; Matsuda, S. ; Hisamatsu, T.

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

987

Lastpage

990

Abstract

The authors compare the effects of irradiation with various energies on the output characteristics of silicon solar cells by writing the particle fluence as a displacement damage dose. Using this method, the degradation to a given cell structure in any radiation environment can be estimated. In addition, they show that the evolution of cell parameters can be calculated quite accurately using PC-1D with consideration of only the combined effects of minority carrier lifetime reduction and carrier removal. As a result, the behavior of different cell structures can be estimated very quickly

Keywords

carrier lifetime; electronic engineering computing; elemental semiconductors; minority carriers; radiation effects; semiconductor device models; silicon; software packages; solar cells; 50 mum; PC-1D; Si; carrier removal; cell structure degradation; displacement damage analysis; displacement damage dose; irradiation effects; minority carrier lifetime reduction; output characteristics; particle fluence; silicon solar cells; Charge carrier lifetime; Degradation; Electrons; Energy loss; Equations; Photovoltaic cells; Power generation; Protons; Silicon; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654254

Filename

654254