Title :
Plasma charging damage of ultra-thin gate-oxide-the measurement dilemma
Author :
Cheung, Kin P. ; Mason, Philip ; Hwang, David
Author_Institution :
Lucent Technol. Bell Labs., USA
Abstract :
We examined the problem of detecting plasma charging damage in deep submicron technology where the gate-oxide is ultra-thin. From the viewpoint of damage impacting gate-oxide reliability, we show that the current available method is incapable to provide sufficient sensitivity
Keywords :
plasma materials processing; deep submicron technology; plasma charging damage measurement; reliability; ultrathin gate oxide; Antenna measurements; Area measurement; Circuit synthesis; Current measurement; Electric breakdown; Gate leakage; Leakage current; Plasma measurements; Stress measurement; Tunneling;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870566
