A novel sensor for the direct measurement of process induced residual stress in interconnects

Author

Horsfall, A.B. ; Santos, J. M M dos ; Soare, S.M. ; Wright, N.G. ; O´Neill, A.G. ; Bull, S.J. ; Walton, A.J. ; Gundlach, A.M. ; Stevenson, J.T.M.

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Univ. of Newcastle, UK

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

115

Lastpage

118

Abstract

Residual stress in multilevel interconnects is a potential road block for the ITRS. Direct measurement of stress in interconnect tracks has been demonstrated for the first time using a rotating sensor fabricated in metallisation layers. The rotation is observable with a reflected light microscope and is compared with computer simulations using ANSYS. The structure is suitable for use in a production environment and is scalable to deep submicron features for future technology nodes.

Keywords

finite element analysis; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; internal stresses; strain sensors; stress measurement; yield stress; deep submicron features; direct measurement; finite element model; metallisation layers; multilevel interconnects; process induced residual stress; reflected light microscope; rotating sensor; Chemical engineering; Dielectric substrates; Integrated circuit interconnections; Metallization; Microelectronics; Residual stresses; Silicon; Stress measurement; Tensile stress; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256824

Filename

1256824