Title :
Electron-shading characterization in a HDP contact etching process using a patterned CHARM wafer
Author :
Carrère, J.P. ; Poiroux, T. ; Lukaszek, W. ; Verove, C. ; Haond, M. ; Reimbold, G. ; Turban, G.
Author_Institution :
Centre of Commun., CNET STMicroelectron., Crolles, France
Abstract :
In this work, a CHARM-2 wafer with high aspect ratio resist patterns has been used to quantitatively characterize the electron-shading effect in a HDP oxide etch reactor. Moreover, we show by the decrease of the maximum collected current that an ion shading phenomenon also occurs for the highest aspect ratio. Finally, a careful analysis of antenna ratio effects may indicate the importance of UV assisted leakage current
Keywords :
sputter etching; CHARM wafer; HDP contact etching; UV illumination; antenna ratio; electron shading; gate oxide; high aspect ratio resist pattern; ion shading; leakage current; plasma procesing damage; surface charging; Electrons; Etching; Inductors; Leakage current; Plasma applications; Plasma measurements; Plasma properties; Resists; Sensor phenomena and characterization; Voltage;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870575
