Title :
Subthreshold characteristics of p-type triple-gate MOSFETs
Author :
Lemme, M. ; Mollenhauer, T. ; Henschel, W. ; Wahlbrink, T. ; Gottlob, H. ; Efavi, J. ; Baus, M. ; Winkler, O. ; Spangenberg, B. ; Kurz, H.
Author_Institution :
Adv. Microelectron. Center Aachen, AMO GmbH, Aachen, Germany
Abstract :
The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, the output and transfer characteristics of 70 nm printed gate length pMOSFETs with 22 nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.
Keywords :
MOSFET; silicon-on-insulator; 22 nm; 70 nm; MESA width; long channel devices; multiple channel SOI; p-MOSFET subthreshold characteristics temperature dependence; p-type triple-gate MOSFET; printed gate length; scaling; short channel devices; transfer characteristics; Etching; Fabrication; Ion implantation; MOSFET circuits; Plasma applications; Plasma chemistry; Plasma immersion ion implantation; Resists; Silicon; Temperature;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256826
