Title :
Multi-bias dependence of threshold voltage, subthreshold swing, and mobility in G/sup 4/-FETs
Author :
Akarvardar, K. ; Dufrene, B. ; Cristoloveanu, S. ; Blalock, Benjamin J. ; Higashino, T. ; Mojarradi, M.M. ; Kolaw, E.
Author_Institution :
Inst. of Microelectron., Electromagnetism, & Photonics, ENSERG, Grenoble, France
Abstract :
Systematic measurements of four-gate SOI transistors (G/sup 4/-FET) are presented. Methods of extraction of the threshold voltage, subthreshold swing, and mobility in the linear region are discussed and results are shown. The extracted parameters demonstrate the complex dependence of the multi-gate biases, which is explained. A new extraction technique for the carrier mobility and effective width of devices with isolated multiple gates is proposed.
Keywords :
carrier mobility; field effect transistors; semiconductor device models; silicon-on-insulator; G/sup 4/-FET; accumulation-mode transistor; four-gate SOI transistors; isolated multiple gate effective width; linear region carrier mobility; multi-gate biases; parameter extraction technique; subthreshold swing; threshold voltage multi-bias dependence; Aerospace electronics; Current measurement; Extrapolation; Laboratories; MOSFET circuits; Microelectronics; Parameter extraction; Photonics; Propulsion; Threshold voltage;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256827
