Damage-free plasma treatment before SACVD deposition

Author

Bloot, Annemarie S. ; Peters, Walter ; Luchies, Jan-Marc

Author_Institution

Philips Semicond., Nijmegen, Netherlands

fYear

2000

fDate

2000

Firstpage

34

Lastpage

37

Abstract

Charging impact of various plasma treatments before intermetal dielectric SACVD deposition has been investigated. Dry strip using CF ₄/O₂ or CF₄/H₂O plasma as well as SACVD pre-treatments with O₂, N₂ are compared with no plasma treatment. Furthermore, O₂, pre-treatment is investigated for a lamp-heated and a D×Z SACVD deposition tool. The evaluation methods in-line Plasma Damage Monitor (PDM) wafers, end-of-line electrically tested antenna structures, Q_bd measurements and product yield data show consistent results. The studied dry strip recipes using CF₄/O₂ or CF₄/H₂O plasma introduce some charging. A N₂ plasma pre-treatment results in high PDM values (40 V), no failing antenna structures, no Q_bd fails and some yield loss (0.9%). This work showed for O₂ pre-treatment on a lamp-heated deposition tool excessive PDM values (-31 V), failing antenna structures (6.9%), Q_bd fails (4.2%) and yield loss (1.8%). However, the use of a O₂ plasma in a D×Z tool is found to be the best pre-treatment

Keywords

chemical vapour deposition; ion-surface impact; sputter etching; surface cleaning; surface treatment; N₂; O₂; SACVD deposition; damage-free plasma treatment; end-of-line electrically tested antenna structures; evaluation methods; intermetal dielectric SACVD deposition; product yield data; Design for quality; Dielectrics; Electric variables measurement; Plasma applications; Plasma chemistry; Plasma measurements; Semiconductor films; Strips; Surface morphology; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 2000 5th International Symposium on

Conference_Location

Santa Clara, CA

Print_ISBN

0-9651577-4-1

Type

conf

DOI

10.1109/PPID.2000.870588

Filename

870588