DocumentCode
2441361
Title
Thermal recovery of degraded space silicon solar cells due to large fluence irradiation
Author
Hisamatsu, Tadashi ; Matsuda, Sumio ; Nakao, Tetsuya ; Matsumoto, Yusuke ; Taylor, Stephen J. ; Yamaguchi, Masaki
Author_Institution
Nat. Space Dev. Agency of Japan, Tokyo, Japan
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
991
Lastpage
994
Abstract
As a part of analysis of “the anomalous degradation behavior” which is found in large-fluence-irradiated Si solar cells, thermal recovery of damaged cells are investigated. The cells show partial recovery at relatively low temperature such as 200°C and 350°C, which is consistent with removal of the divacancy
Keywords
aerospace testing; elemental semiconductors; radiation effects; recovery; semiconductor device testing; silicon; solar cells; space vehicle power plants; thermal analysis; 200 C; 350 C; Si; Si solar cells; anomalous degradation behavior; large fluence irradiation; low temperature; performance degradation; space power; thermal recovery; Alloying; Annealing; Cities and towns; Electrons; Photovoltaic cells; Protons; Silicon; Space technology; Temperature; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654255
Filename
654255
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