Title :
3.75 MeV electron irradiation of III-V concentrator tandem cells
Author :
Andreev, V.M. ; Chosta, O.I. ; Khvostikov, V.P. ; Paleeva, E.V. ; Shvarts, M.Z.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
29 Sep-3 Oct 1997
Abstract :
3.75 MeV electron irradiation of LPE-grown AlGaAs/GaAs monolithic two-terminal tandem solar cells was studied. In addition, Al0.35 Ga0.65As and GaAs single-junction cells with various junction depths prepared to simulate the top and bottom cells of the tandems were irradiated. The cell degradation was characterized by spectral response and by illuminated current-voltage measurements. The degradation of minority-carrier diffusion length were measured on the AlGaAs and GaAs structures for optimization of the tandem solar cells
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; electron beam effects; gallium arsenide; liquid phase epitaxial growth; minority carriers; p-n heterojunctions; semiconductor device testing; semiconductor growth; solar cells; solar energy concentrators; 3.75 MeV; AlGaAs-GaAs; AlGaAs/GaAs monolithic two-terminal tandem solar cells; III-V concentrator tandem solar cells; LPE semiconductor growth; bottom cells; electron irradiation; illuminated current-voltage measurements; junction depth; minority-carrier diffusion length; solar cell degradation; spectral response; structure optimization; top cells; Current measurement; Degradation; Electrons; Gallium arsenide; III-V semiconductor materials; Length measurement; P-n junctions; Photoconductivity; Photovoltaic cells; Space missions;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654257
