Title :
Proton irradiated MBE grown GaInP/GaAs single junction and tandem solar cells
Author :
Kazantsev, A.B. ; Lammasniemi, J. ; Jaakkola, R. ; Pessa, M. ; Rajatora, M. ; Jain, R.K.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
29 Sep-3 Oct 1997
Abstract :
Degradation characteristics for MBE grown Ga0.51In0.49P and GaAs single junction and Ga0.51In0.49P/GaAs tandem solar cells irradiated with 3 MeV and 10 MeV protons with fluences of 1010- 1013 cm-2 are reported. The cell degradation was characterized with illuminated current-voltage (I-V) and spectral response measurements. Minority carrier diffusion length damage coefficients for the GaAs cells for 3 MeV and 10 MeV protons were calculated as a function of fluence. The results were compared to the InP damage coefficients. In addition, photo-annealing recovery effect at temperatures of 35-60°C under 1-Sun AM0 illumination on the Ga0.51In0.49P cells are presented
Keywords :
III-V semiconductors; annealing; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; minority carriers; molecular beam epitaxial growth; proton effects; semiconductor device testing; semiconductor growth; solar cells; 10 MeV; 3 MeV; 35 to 60 C; Ga0.51In0.49P; Ga0.51In0.49P-GaAs; GaAs; MBE semiconductor growth; degradation characteristics; illuminated I-V measurements; minority carrier diffusion length damage coefficients; photo-annealing recovery; proton irradiation; single junction solar cells; spectral response measurements; tandem solar cells; Degradation; Filters; Gallium arsenide; Inductors; Laboratories; MOCVD; Molecular beam epitaxial growth; Photovoltaic cells; Physics; Proton accelerators;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654258
