Title :
Radiation hard In0.53Ga0.47As solar cells with Zn diffused emitters
Author :
Karlina, L.B. ; Blagnov, P.A. ; Boiko, M.E. ; Kozlovskii, V.V. ; Kudriavtsev, Yu.A. ; Solov´ev, V.A. ; Vargas-Aburto, C. ; Uribe, R.M. ; Brinker, D.J.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
29 Sep-3 Oct 1997
Abstract :
This paper reports on the radiation resistance of In0.53Ga0.47As (InGaAs) cells with a p/n configuration. These solar cells can be used as bottom cells in high-efficiency tandems with wide gap top cells and as thermophotovoltaic converters. The cells designed for this study were fabricated by diffusion of Zn into undoped layers grown by liquid phase epitaxy (LPE). Cells with a total area of 0.16 cm2 were used to carry out these measurements. After 1-MeV electron irradiation at a fluence level of 1×1016 cm-2, the following values were typically found in the samples used for this study. VOC =0.26-0.29 V; JSC=38-40 mA/cm2; FF=0.59-0.60; efficiency=4.2-4.5% (AM0, 1 Sun)
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; indium compounds; liquid phase epitaxial growth; radiation hardening (electronics); semiconductor device testing; semiconductor growth; solar cells; zinc; 0.26 to 0.29 V; 1 MeV; 4.2 to 4.5 percent; In0.53Ga0.47As; In0.53Ga0.47As solar cells; Zn; Zn diffused emitters; bottom cells; electron irradiation; liquid phase epitaxy; radiation hard devices; radiation resistance; thermophotovoltaic converters; Area measurement; Electrical resistance measurement; Electrons; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Photovoltaic cells; Spontaneous emission; Substrates; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654259
