Title :
Influence of plasma induced damage during active etch on silicon defect generation
Author :
Nallapati, Giri ; Loiko, Konstantin V.
Author_Institution :
Dallas Semicond. Corp., Dallas, TX, USA
Abstract :
The role of plasma induced damage during active nitride etch in silicon defect generation was investigated. A correlation was established between the overetch pattern and surface densities of stacking faults and dislocations. High junction leakage and yield loss were observed in areas of the wafer subjected to excessive overetch. Optimization of overetch time resulted in defect free wafers and significant yield improvement
Keywords :
dislocation density; dislocation structure; elemental semiconductors; ion-surface impact; silicon; sputter etching; stacking faults; surface composition; surface structure; Si; Si defect generation; active etch; active nitride etch; defect free wafers; dislocations; high junction leakage; overetch pattern; plasma induced damage; stacking faults; surface densities; yield loss; Circuit faults; Etching; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Plasma sources; Silicon; Stacking;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870596
