Influence of plasma induced damage during active etch on silicon defect generation

Author

Nallapati, Giri ; Loiko, Konstantin V.

Author_Institution

Dallas Semicond. Corp., Dallas, TX, USA

fYear

2000

fDate

2000

Firstpage

61

Lastpage

64

Abstract

The role of plasma induced damage during active nitride etch in silicon defect generation was investigated. A correlation was established between the overetch pattern and surface densities of stacking faults and dislocations. High junction leakage and yield loss were observed in areas of the wafer subjected to excessive overetch. Optimization of overetch time resulted in defect free wafers and significant yield improvement

Keywords

dislocation density; dislocation structure; elemental semiconductors; ion-surface impact; silicon; sputter etching; stacking faults; surface composition; surface structure; Si; Si defect generation; active etch; active nitride etch; defect free wafers; dislocations; high junction leakage; overetch pattern; plasma induced damage; stacking faults; surface densities; yield loss; Circuit faults; Etching; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Plasma sources; Silicon; Stacking;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 2000 5th International Symposium on

Conference_Location

Santa Clara, CA

Print_ISBN

0-9651577-4-1

Type

conf

DOI

10.1109/PPID.2000.870596

Filename

870596