Title :
Resonant tunneling devices on Si(111) substrates using fluoride alloy heterostructures
Author :
Maeda, Motoki ; Watanabe, So ; Tsutsui, Kazuo
Author_Institution :
Dept. of Adv. Appl. Electron., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Resonant tunneling diodes (RTDs) composed of CaF/sub 2/-barrier/CdF/sub 2/-well/CaF/sub 2/-barrier/Si(111) heterostructures are expected to be co-integrated with Si-LSI. The alloy of CaF/sub 2/ and CdF/sub 2/, namely Ca/sub x/Cd/sub l-x/F/sub 2/, was investigated in order to improve characteristics of the RTDs. The barrier height of the RTDs was found to be lowered by using Ca/sub 0.5/Cd/sub 0.5/F/sub 2/ instead of CdF/sub 2/. It was also found that the Cd-rich (x<0.3) alloy could be grown with good crystallinity even at higher temperature than that for pure-CdF/sub 2/. RTDs using the Cd-rich alloy for the well layer exhibited large peak to valley current ratio at room temperature due to the good crystallinity.
Keywords :
cadmium compounds; calcium compounds; molecular beam epitaxial growth; negative resistance devices; quantum well devices; resonant tunnelling diodes; silicon; CaF/sub 2/-CdF/sub 2/-CaF/sub 2/-Si; barrier height; crystallinity; double-barrier fluoride; fluoride alloy heterostructures; large peak to valley current ratio; negative differential resistance characteristics; quantum-well layer; resonant tunneling diodes; solid-source molecular beam epitaxy; Atomic force microscopy; Buffer layers; Chemicals; Circuits; Crystallization; Diodes; Molecular beam epitaxial growth; Resonant tunneling devices; Substrates; Temperature;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256840
