Title :
SETMOS-a high current Coulomb blockade oscillation device
Author :
Mahapatra, Santanu ; Pott, Vincent ; Ionescu, Adrian Mihai
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
´SETMOS´ is a novel device that offers Coulomb Blockade oscillation characteristics similar to Single Electron Transistor (SET) with much higher current driving capability (/spl sim//spl mu/A). The-proposed device is based on hybrid cross-connected SET-MOS circuit architecture and its characteristics are verified with Monte Carlo simulation and analytical model in sub-ambient temperature range (-200/spl deg/C to -100/spl deg/C). The proposed device exhibits a Negative Differential Resistance (NDR) behaviour which can be tuned by external voltage and current biases. Two applications of proposed SETMOS architecture: (i) analog amplifier, and (ii) temperature sensor, are also demonstrated.
Keywords :
CMOS analogue integrated circuits; Coulomb blockade; MOSFET; Monte Carlo methods; SPICE; negative resistance devices; semiconductor device models; single electron transistors; temperature sensors; -200 to -100 C; Coulomb blockade oscillation device; Monte Carlo simulation; SETMOS; SMARTSPICE; analog amplifier; analytical model; high current device; hybrid cross-connected SET-MOS circuit; negative differential resistance; subambient temperature range; temperature sensor; Analytical models; CMOS technology; Leg; MOS devices; MOSFET circuits; Microelectronics; Single electron transistors; Temperature sensors; Very large scale integration; Voltage;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256841
