Bipolar model extension for MOS transistors considering gate coupling effects in the HBM ESD domain

Author

Wolf, Heinrich ; Gieser, Horst ; Stadler, Wolfgang

Author_Institution

Lehrstuhl fur Integriete Schaltungen, Tech. Univ. Munchen, Germany

fYear

1998

fDate

6-8 Oct. 1998

Firstpage

271

Lastpage

280

Abstract

The compact model for NMOS transistors combines both the high-current bipolar mode and the MOS mode, considering the modulation of the current gain /spl beta/ and the gate coupling effects. For the studied 0.35 /spl mu/m-CMOS device, measurement and simulation correlate very well with respect to layout variations, fulfilling a prerequisite for the simulation guided synthesis and optimization of protection structures and schemes. The open model interface also allows the use of existing proprietary MOS-models.

Keywords

CMOS integrated circuits; MOSFET; circuit CAD; circuit optimisation; circuit simulation; electrostatic discharge; integrated circuit design; integrated circuit modelling; integrated circuit reliability; semiconductor device models; 0.35 micron; CMOS device; CMOS device measurement; CMOS device simulation; HBM ESD domain; MOS mode; MOS transistors; NMOS transistor model; NMOS transistors; bipolar model extension; current gain modulation; gate coupling effects; high-current bipolar mode; layout variations; open model interface; proprietary MOS-models; protection structures; simulation guided optimization; simulation guided synthesis; Bipolar transistors; Circuit simulation; Electrostatic discharge; Integrated circuit measurements; Integrated circuit synthesis; MOS devices; MOSFETs; Protection; Semiconductor device modeling; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1998

Conference_Location

Reno, NV, USA

Print_ISBN

1-878303-91-0

Type

conf

DOI

10.1109/EOSESD.1998.737047

Filename

737047