Title :
Characterization and optimization of a bipolar ESD-device by measurements and simulations
Author :
Stricker, Andreas D. ; Mergens, Markus ; Mettler, Stephan ; Wilkening, Wolfgang ; Fichtner, Wolfgang ; Wolf, Heinrich ; Gieser, Horst
Author_Institution :
Integrated Syst. Lab., Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
Using an example of a bipolar transistor for ESD protection, we present new ways to incorporate a simulation tool chain into the design process. After calibration of the simulators, the best layout dimensions and well doping profiles could be evaluated. Differences in the devices´ switching behaviour under CDM and HBM stress conditions are demonstrated by transient device simulations. Finally, we outline a method to extract a set of parameters for a compact circuit model.
Keywords :
bipolar transistors; circuit CAD; circuit optimisation; circuit simulation; doping profiles; electrostatic discharge; integrated circuit modelling; integrated circuit reliability; protection; semiconductor device measurement; semiconductor device models; static electrification; CDM stress conditions; ESD protection; HBM stress conditions; bipolar ESD-device; bipolar transistor; circuit model; design process; layout dimensions; measurements; model parameter extraction; optimization; simulation tool chain; simulations; simulator calibration; switching behaviour; transient device simulation; well doping profiles; Bipolar transistors; Breakdown voltage; Circuit simulation; Design optimization; Electronic equipment testing; Electrostatic discharge; Laboratories; Measurement standards; Protection; System testing;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1998
Conference_Location :
Reno, NV, USA
Print_ISBN :
1-878303-91-0
DOI :
10.1109/EOSESD.1998.737049
