Title :
Fowler-Nordheim and hot-carrier stress study of latent plasma charging damage in various 50 Å gate dielectrics
Author :
Brozek, Tomasz ; Huber, John ; Walls, James
Author_Institution :
Centre for Integrated Syst. Dev., Motorola Inc., Mesa, AZ, USA
Abstract :
Latent charging damage strongly depends on the gate oxide hardness and its resistance against the high-field degradation experienced during the plasma process. This study compares resistance to plasma charging damage of three 50 Å gate dielectrics compatible with sub-micron CMOS technology. Fowler-Nordheim electron injection and hot-carrier stress was applied to NMOS and PMOS transistors with dry oxide, HCl-grown oxide, and dry nitrided oxide to evaluate latent charging damage
Keywords :
MOSFET; charge injection; elemental semiconductors; hot carriers; semiconductor device measurement; silicon; silicon compounds; sputter etching; surface charging; 50 A; Fowler-Nordheim electron injection; Fowler-Nordheim study; HCl; HCl-grown oxide; NMOS transistors; PMOS transistors; Si-SiO2; Si-SiON; dry nitrided oxide; dry oxide; gate dielectrics; gate oxide hardness; high-field degradation; hot-carrier stress; latent charging damage; latent plasma charging damage; plasma charging damage; sub-micron CMOS technology; CMOS technology; Degradation; Dielectrics; Electrons; Hot carrier injection; Hot carriers; MOS devices; MOSFETs; Plasmas; Stress;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870603
