Fowler-Nordheim and hot-carrier stress study of latent plasma charging damage in various 50 Å gate dielectrics

Author

Brozek, Tomasz ; Huber, John ; Walls, James

Author_Institution

Centre for Integrated Syst. Dev., Motorola Inc., Mesa, AZ, USA

fYear

2000

fDate

2000

Firstpage

89

Lastpage

92

Abstract

Latent charging damage strongly depends on the gate oxide hardness and its resistance against the high-field degradation experienced during the plasma process. This study compares resistance to plasma charging damage of three 50 Å gate dielectrics compatible with sub-micron CMOS technology. Fowler-Nordheim electron injection and hot-carrier stress was applied to NMOS and PMOS transistors with dry oxide, HCl-grown oxide, and dry nitrided oxide to evaluate latent charging damage

Keywords

MOSFET; charge injection; elemental semiconductors; hot carriers; semiconductor device measurement; silicon; silicon compounds; sputter etching; surface charging; 50 A; Fowler-Nordheim electron injection; Fowler-Nordheim study; HCl; HCl-grown oxide; NMOS transistors; PMOS transistors; Si-SiO₂; Si-SiON; dry nitrided oxide; dry oxide; gate dielectrics; gate oxide hardness; high-field degradation; hot-carrier stress; latent charging damage; latent plasma charging damage; plasma charging damage; sub-micron CMOS technology; CMOS technology; Degradation; Dielectrics; Electrons; Hot carrier injection; Hot carriers; MOS devices; MOSFETs; Plasmas; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 2000 5th International Symposium on

Conference_Location

Santa Clara, CA

Print_ISBN

0-9651577-4-1

Type

conf

DOI

10.1109/PPID.2000.870603

Filename

870603