Author :
Froment, B. ; Muller, M. ; Brut, H. ; Pantel, R. ; Carron, V. ; Achard, H. ; Halimaoui, A. ; Boeuf, F. ; Wacquant, F. ; Regnier, C. ; Ceccarelli, D. ; Palla, R. ; Beverina, A. ; DeJonghe, V. ; Spinelli, P. ; LeBorgne, O. ; Bard, K. ; Lis, S. ; Tirard, V.
Abstract :
In this work, NiSi SALICIDE has been fully integrated with sub-50 nm gate length transistors and compared to its CoSi/sub 2/ counterpart. Nickel thickness has been reduced to target the CoSi/sub 2/ sheet resistance. It was found that NiSi layers basic lattice planes with vertical orientation are often observed inside the grains. NiSi-based CMOS transistors show the same performance as CoSi2-transistors, but nickel can also silicide very narrow poly lines whereas cobalt can not. Moreover, NiSi reduces the STI diode-leakage perimeter, but increases channel side leakage, where CoSi/sub 2/ shows a "Schottky behavior". Thus we show that nickel allow MOS transistor scaling for future technology.
Keywords :
MOSFET; Schottky effect; cobalt compounds; isolation technology; leakage currents; nickel compounds; 50 nm; CMOS transistors; CoSi/sub 2/; MOS transistor scaling; NiSi; SALICIDE; STI diode-leakage perimeter; Schottky behavior; channel side leakage; lattice plane orientation; layer basic lattice planes; narrow poly lines; nickel thickness; sheet resistance; Annealing; Cobalt; Conductivity; MOS devices; Nickel; Schottky diodes; Semiconductor diodes; Sheet materials; Silicides; Thermal resistance;
