DocumentCode :
2441677
Title :
Investigation into socketed CDM (SDM) tester parasitics
Author :
Chaine, M. ; Verhaege, K. ; Avery, L. ; Kelly, M. ; Gieser, H. ; Bock, K. ; Henry, L.G. ; Meuse, T. ; Brodbeck, T. ; Barth, J.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
1998
fDate :
6-8 Oct. 1998
Firstpage :
301
Lastpage :
310
Abstract :
The ESD Association standards working group 5.3.2 is analyzing the procedure and stress that is applied to a device under test (DUT) using a socketed discharge model (SDM) test system, formerly referred to as socketed CDM. Our final goal is to define an SDM tester specification that will guarantee test result reproducibility across different test equipment. This paper investigates the effect of tester background parasitics on the discharge current waveforms of an SDM tester. Characteristic waveforms were studied and SDM testing was performed on actual devices. It is shown that SDM tester parasitics determine the stress applied to the DUT. This directly affects the SDM failure threshold voltage levels and may lead to miscorrelation and nonreproducibility of test results across different SDM test systems. This paper empirically determines the relative contributions of the various tester parasitics to the total stress applied to the DUT. Our investigations indicate that the tester provides 10 to 20 pF parasitic capacitance discharge into each pin of the device. Tester background parasitic elements play such an important role in the SDM discharge event that correlation between test systems built by different manufacturers is unlikely without completely duplicating a particular tester.
Keywords :
capacitance; electrostatic discharge; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; standards; test equipment; DUT stress; ESD Association standards working group; SDM discharge event; SDM failure threshold voltage levels; SDM test systems; SDM tester; SDM tester parasitics; SDM tester specification; SDM testing; characteristic waveforms; device under test; discharge current waveforms; parasitic capacitance discharge; socketed CDM test system; socketed CDM tester parasitics; socketed discharge model test system; test equipment; test procedure; test result miscorrelation; test result nonreproducibility; test result reproducibility; test stress; tester background parasitic elements; tester background parasitics; tester parasitics; Electrostatic discharge; Manufacturing; Parasitic capacitance; Performance evaluation; Reproducibility of results; Standards Working Groups; Stress; System testing; Test equipment; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1998
Conference_Location :
Reno, NV, USA
Print_ISBN :
1-878303-91-0
Type :
conf
DOI :
10.1109/EOSESD.1998.737050
Filename :
737050
Link To Document :
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