Interface state creation due to low-field latent damage depassivation

Author

Pantisano, Luigi ; Paccagnella, A. ; Cellere, G. ; Colombo, P. ; Valentini, M.G.

Author_Institution

Dipt. di Elettronica e Inf., Padova Univ., Italy

fYear

2000

fDate

2000

Firstpage

93

Lastpage

96

Abstract

This work investigates the low-field latent plasma damage depassivation from the viewpoint of interface states. In this contribution we use a stress-and-test characterization method which permits an evaluation of the latent damage interface state build-up at relatively very-low field. This experimental method further permits an investigation of the physical mechanisms during latent damage depassivation

Keywords

MOSFET; interface states; passivation; semiconductor device measurement; semiconductor device testing; sputter etching; MOSFET; interface state creation; interface states; latent damage depassivation; latent damage interface state build-up; low-field latent damage depassivation; low-field latent plasma damage depassivation; physical mechanisms; stress-and-test characterization method; very-low field; Charge carrier processes; Charge pumps; Fingers; Interface states; MOSFET circuits; Passivation; Plasma density; Stress; Thumb; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 2000 5th International Symposium on

Conference_Location

Santa Clara, CA

Print_ISBN

0-9651577-4-1

Type

conf

DOI

10.1109/PPID.2000.870604

Filename

870604