DocumentCode :
2441687
Title :
Interface state creation due to low-field latent damage depassivation
Author :
Pantisano, Luigi ; Paccagnella, A. ; Cellere, G. ; Colombo, P. ; Valentini, M.G.
Author_Institution :
Dipt. di Elettronica e Inf., Padova Univ., Italy
fYear :
2000
fDate :
2000
Firstpage :
93
Lastpage :
96
Abstract :
This work investigates the low-field latent plasma damage depassivation from the viewpoint of interface states. In this contribution we use a stress-and-test characterization method which permits an evaluation of the latent damage interface state build-up at relatively very-low field. This experimental method further permits an investigation of the physical mechanisms during latent damage depassivation
Keywords :
MOSFET; interface states; passivation; semiconductor device measurement; semiconductor device testing; sputter etching; MOSFET; interface state creation; interface states; latent damage depassivation; latent damage interface state build-up; low-field latent damage depassivation; low-field latent plasma damage depassivation; physical mechanisms; stress-and-test characterization method; very-low field; Charge carrier processes; Charge pumps; Fingers; Interface states; MOSFET circuits; Passivation; Plasma density; Stress; Thumb; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
Type :
conf
DOI :
10.1109/PPID.2000.870604
Filename :
870604
Link To Document :
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