DocumentCode :
2441791
Title :
Design and technology of compact high-power converters
Author :
Shenai, Krishna ; Neudeck, Philip G. ; Schwarze, G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
30
Abstract :
New material technologies such as silicon carbide (SiC) are promising in the development of compact high-power converters for next-generation power electronics applications. This paper presents an optimized converter design approach that takes into consideration nonlinear interactions among various converter components, source and load. It is shown that with the development of high-temperature, high-power SiC power module technology, magnetic components and capacitors become important technology challenges, and cannot be ignored. A 50% improvement in power density is calculated for a 100 V-2 kV, 7k W SiC DC-DC power converter operating at 150°C compared to a silicon power converter. The SiC power converter can be operated at junction temperatures in excess of 300°C (as compared to 150°C for a silicon power converter) with reasonable efficiency that potentially leads to a significant reduction in thermal management
Keywords :
DC-DC power convertors; semiconductor materials; silicon compounds; 100 V to 2 kV; 150 C; 300 C; 7 kW; 85 percent; DC-DC power converter; SiC; SiC power converter; capacitors; compact high-power converters; high-temperature high-power SiC power module technology; junction temperatures; magnetic components; next-generation power electronics applications; nonlinear interactions; optimized converter design; power density; silicon carbide; thermal management reduction; Capacitors; DC-DC power converters; Design optimization; Energy management; Materials science and technology; Multichip modules; Power electronics; Silicon carbide; Temperature; Thermal management;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Engineering Conference and Exhibit, 2000. (IECEC) 35th Intersociety
Conference_Location :
Las Vegas, NV
Print_ISBN :
1-56347-375-5
Type :
conf
DOI :
10.1109/IECEC.2000.870620
Filename :
870620
Link To Document :
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