Title :
Optical characterization of antenna-area-dependent gate oxide charging damage in MOS capacitors by photoreflectance spectroscopy
Author :
Agata, Masashi ; Sogawa, Masayuki ; Maida, Osamu ; Eriguchi, Koji ; Fujimoto, Akira ; Kanashima, Takeshi ; Okuyama, Masanori
Author_Institution :
Dept. of Phys. Sci., Osaka Univ., Japan
Abstract :
Thin gate oxide charging damage has been studied by photoreflectance (PR) spectroscopy in MOS structure samples. Antenna-area-dependent oxide charging damage such as the generation of SiO2/Si interface states as well as that of electron trap sites in the oxides, has been also addressed by the decrease of the PR peak signal intensity from MOS capacitors, and also confirmed by the capacitance-voltage (C-V) characteristics
Keywords :
MOS capacitors; capacitance; electron traps; elemental semiconductors; interface states; photoreflectance; semiconductor device measurement; silicon; silicon compounds; spectral line intensity; sputter etching; surface charging; C-V characteristics; MOS capacitors; MOS structure; PR peak signal intensity; Si-SiO2; SiO2/Si interface states; antenna-area-dependent gate oxide charging damage; antenna-area-dependent oxide charging damage; capacitance-voltage characteristics; electron trap sites; optical characterization; photoreflectance spectroscopy; thin gate oxide charging damage; Capacitance-voltage characteristics; Frequency; MOS capacitors; Optical modulation; Plasma measurements; Reflectivity; Resists; Signal analysis; Spectroscopy; Surface topography;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870621
