Title :
A study of ESD sensitivity in AMR and GMR recording heads
Author :
Lam, Chung F. ; Chang, Caleb ; Karimi, Rahmat
Author_Institution :
Read-Rite Corp., Fremont, CA, USA
Abstract :
In this paper, the behaviour of giant magnetoresistive (GMR) recording devices "zapped" with increasing human body model (HBM) ESD currents was studied through quasi-static tests (QST), magnetic tests (MT) and bit-error rate (BER) tests. The threshold HBM voltage value sufficient to "magnetically" damage the GMR head was presented. The behaviour of anisotropic magnetoresistive (AMR) recording devices "zapped" with increasing HBM ESD currents was also studied. The relationship between the threshold HBM voltage, sufficient to raise the resistance of AMR head by 1%, versus the AMR areal density is presented.
Keywords :
electronic equipment testing; electrostatic discharge; giant magnetoresistance; magnetic anisotropy; magnetic heads; magnetic recording; magnetoresistive devices; AMR areal density; AMR head; AMR head resistance; AMR recording heads; BER tests; ESD sensitivity; GMR head; GMR recording heads; HBM ESD currents; anisotropic magnetoresistive recording devices; bit-error rate tests; giant magnetoresistive recording devices; human body model ESD currents; magnetic damage; magnetic tests; quasi-static tests; threshold HBM voltage; threshold HBM voltage value; Anisotropic magnetoresistance; Biological system modeling; Bit error rate; Electrostatic discharge; Giant magnetoresistance; Humans; Magnetic heads; Magnetic recording; Testing; Threshold voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1998
Conference_Location :
Reno, NV, USA
Print_ISBN :
1-878303-91-0
DOI :
10.1109/EOSESD.1998.737057
