Title :
Two abnormal peaks induced by plasma process in the noise spectra of etched Si and Si1-xGex
Author :
Ouacha, H. ; Mamor, M. ; Willander, M. ; Ouacha, A. ; Auret, F.D. ; Goodman, S.A.
Author_Institution :
Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
The impact of plasma damage on the flicker noise properties of Ti/p-Si and Ti/p-Si1-xGex (with x=0.05) Schottky junctions is investigated in this work. Two abnormal peaks are observed in the 1/f noise spectra at around 500 Hz and 10 kHz which are the characteristics of the plasma damage. These peaks are shown to be independent of the applied bias and Ge concentration. From the noise experimental data, the introduced noise during the plasma etching process is attributed to the recombination generation noise
Keywords :
1/f noise; Ge-Si alloys; Schottky barriers; electron-hole recombination; elemental semiconductors; flicker noise; semiconductor materials; semiconductor-metal boundaries; silicon; sputter etching; titanium; 1/f noise spectra; 10 kHz; 500 Hz; Schottky junctions; Si1-xGex; Ti-GeSi; Ti-Si; Ti/p-Si; Ti/p-Si1-xGex; abnormal peaks; applied bias; etched Si; flicker noise; noise spectra; plasma damage; plasma etching process; plasma process; recombination generation noise; Frequency; Microwave technology; Noise generators; Noise measurement; Optical noise; Plasma applications; Plasma devices; Plasma properties; Semiconductor device noise; Sputter etching;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870623
