DocumentCode
2441908
Title
300 mm oxide etching system and CUD
Author
Tomoyasu, Masayuki ; Tozawa, Shigeki ; Koshiishi, Akira
Author_Institution
Tokyo Electron Ltd., Yamanashi, Japan
fYear
2000
fDate
2000
Firstpage
106
Lastpage
108
Abstract
It is shown that the same design concepts for 200 mm oxide etch tools can basically be used for 300 mm tools. The process performance evaluation environment, however, is not fully prepared yet. Especially, we need to prepare 300mm charge-up damage (CUD) evaluation wafers to confirm CUD performance in actual conditions
Keywords
integrated circuit design; integrated circuit testing; sputter etching; surface charging; 300 mm; CUD; charge-up damage; design concepts; evaluation wafers; oxide etch tools; oxide etching; process performance evaluation; Cooling; Costs; Electrodes; Etching; Fluid flow; Plasma applications; Plasma chemistry; Plasma density; Plasma measurements; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location
Santa Clara, CA
Print_ISBN
0-9651577-4-1
Type
conf
DOI
10.1109/PPID.2000.870626
Filename
870626
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