Title :
300 mm oxide etching system and CUD
Author :
Tomoyasu, Masayuki ; Tozawa, Shigeki ; Koshiishi, Akira
Author_Institution :
Tokyo Electron Ltd., Yamanashi, Japan
Abstract :
It is shown that the same design concepts for 200 mm oxide etch tools can basically be used for 300 mm tools. The process performance evaluation environment, however, is not fully prepared yet. Especially, we need to prepare 300mm charge-up damage (CUD) evaluation wafers to confirm CUD performance in actual conditions
Keywords :
integrated circuit design; integrated circuit testing; sputter etching; surface charging; 300 mm; CUD; charge-up damage; design concepts; evaluation wafers; oxide etch tools; oxide etching; process performance evaluation; Cooling; Costs; Electrodes; Etching; Fluid flow; Plasma applications; Plasma chemistry; Plasma density; Plasma measurements; Radio frequency;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870626
