Title :
ALD metal-gate/high-/spl kappa/ gate stack for Si and Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFETs
Author :
Wu, D. ; Persson, S. ; Lindgren, A.-C. ; Sjöblom, G. ; Hellström, P.E. ; Olsson, J. ; Zhang, S.-L. ; Östling, M. ; Vainonen-Ahlgren, E. ; Tois, E. ; Li, W.-M. ; Tuominen, M.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
Abstract :
ALD high-/spl kappa/ dielectrics and TiN metal-gate were successfully incorporated in both Si and Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFETs. The high-/spl kappa/ gate dielectrics used included Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O/sub 3/, Al/sub 2/O/sub 3//HfO/sub 2//Al/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/. The Si transistors with Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O/sub 3/ showed a sub-threshold slope of 75 mV/dec. and a density of interface states of 3/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/. No obvious degradation of the Si channel hole mobility was observed. The Si/sub 0.7/Ge/sub 0.3/ pMOSFETs with the various high-/spl kappa/ gate dielectrics demonstrated enhanced transconductance, drive current and channel hole mobility compared with the Si reference.
Keywords :
Ge-Si alloys; MOSFET; aluminium compounds; atomic layer deposition; dielectric thin films; elemental semiconductors; hafnium compounds; hole mobility; interface states; semiconductor materials; silicon; titanium compounds; ALD high-k dielectrics; Al/sub 2/O/sub 3/-HfAlO-Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/-HfO/sub 2/-Al/sub 2/O/sub 3/; Si; SiGe; TiN; channel hole mobility; interface state density; metal-gate/high-k gate stack; sub-threshold slope; surface-channel pMOSFET; transconductance; Annealing; CMOS technology; Degradation; Dielectric substrates; Hafnium; High-K gate dielectrics; Laboratories; MOSFETs; Tin; Transconductance;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256864
