Title :
SiGe channel p-MOSFETs scaling-down
Author :
Andrieu, F. ; Ernst, Thomas ; Romanjek, K. ; Weber, O. ; Renard, C. ; Hartmann, J.-M. ; Toffoli, A. ; Papon, A.M. ; Truche, R. ; Holliger, P. ; Brévard, L. ; Ghibaudo, G. ; Deleonibus, S.
Author_Institution :
CEA/DRT/LETI, Grenoble, France
Abstract :
We present an in-depth experimental study of the transport in sub-100 nm Si/sub 0.85/Ge/sub 0.15/ p-MOSFETs. Using a novel capacitive method, we have extracted the effective channel length for gate lengths down to 50 nm. We show experimentally that the performance of short channel SiGe devices are limited by the low-field transport regime.
Keywords :
Ge-Si alloys; MOSFET; hole mobility; semiconductor materials; 50 nm; MOSFET scaling-down; SiGe; effective channel length; gate length; hole transport; low-field transport regime; short channel SiGe p-MOSFET; Boron; CMOS process; Capacitive sensors; Effective mass; Germanium silicon alloys; Implants; Isolation technology; MOSFET circuits; Silicon germanium; Temperature;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256865
