Reduced 1/f noise at 293 K in 0.55 /spl mu/m p-Si/sub 0.3/Ge/sub 0.7/ hetero-MOSFETs

Author

Myronov, M. ; Durov, S. ; Mironov, O.A. ; Leadley, D.K. ; Hackbarth, T. ; Hock, G. ; Herzog, H.-J. ; König, U. ; Parker, E.H.C.

Author_Institution

Dept. of Phys., Warwick Univ., Coventry, UK

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

275

Lastpage

277

Abstract

For the first time, we have demonstrated reduced 1/f, low-frequency (LF), noise in sub-/spl mu/m metamorphic high Ge content p-Si/sub 0.3/Ge/sub 0.7/ MOSFETs at 293 K. Three times lower LF noise over the 1-100 Hz range at V/sub DS/ = -50 mV and V/sub G/ - V/sub th/ = -1.5 V was measured for a 0.55 /spl mu/m effective gate length p-Si/sub 0.3/Ge/sub 0.7/ MOSFET compared with p-Si MOSFET. Performed quantitative analysis demonstrates the importance of carrier number fluctuations (CNF) and correlated mobility fluctuations (CMF) components of 1/f noise for p-Si surface channel MOSFET, and absence of CMF for p-Si/sub 0.3/Ge/sub 0.7/ buried channel MOSFETs.

Keywords

1/f noise; Ge-Si alloys; MOSFET; carrier density; carrier mobility; semiconductor device noise; semiconductor materials; -1.5 V; -50 mV; 0.55 micron; 1 to 100 Hz; 1/f noise reduction; 293 K; SiGe; buried channel MOSFET; carrier number fluctuations; correlated mobility fluctuations; effective gate length; low-frequency noise; metamorphic MOSFET; p-SiGe hetero-MOSFET; 1f noise; Circuit noise; Fluctuations; Germanium silicon alloys; Length measurement; Low-frequency noise; MOSFETs; Noise measurement; Noise reduction; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256867

Filename

1256867