Title :
InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells
Author :
Takamoto, T. ; Ikeda, E. ; Agui, T. ; Kurita, H. ; Tanabe, T. ; Tanaka, S. ; Matsubara, H. ; Mine, Y. ; Takagishi, S. ; Yamaguchi, M.
Author_Institution :
Japan Energy Corp., Saitama, Japan
fDate :
29 Sep-3 Oct 1997
Abstract :
Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating GaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with an efficiency of 27-28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed a efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33-34% was achieved for the four-terminal triple-junction cell
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; semiconductor device testing; solar cells; 27 to 28 percent; 33 to 34 percent; InGaP-GaAs-InGaAs-InP; InGaP/GaAs/InGaAs/InP triple-junction solar cells; bottom cells; infra-red transparency; mechanical stacking; solar cell fabrication; substrate; top cells; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; MOCVD; Photonic band gap; Photovoltaic cells; Substrates; Surface waves; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654265
