Title :
Degradation of low frequency noise and DC characteristics on MOSFETs and its correlation with SILC
Author :
Bandiera, L. ; Cester, A. ; Cimino, S. ; Gerardin, S. ; Paccagnella, A. ; Ghidini, G.
Author_Institution :
DEI, Padova Univ., Italy
Abstract :
In this work we have addressed oxide and interface degradation as the mechanisms affecting MOSFET performance in terms of transconductance (g/sub m/), saturation current (I/sub ds,/SAT) and threshold voltage (V/sub th/) before SB (soft breakdown) and HB (hard breakdown). We focused our attention on three points: 1) how interface and oxide trap generation modify the DC MOSFET characteristics; 2) the drain current noise during stress; 3) the correlation between the degradation of DC and noise characteristics and the traps commonly related to SILC (stress induced leakage current) conduction.
Keywords :
MOSFET; interface states; leakage currents; semiconductor device breakdown; semiconductor device measurement; semiconductor device noise; 3 nm; DC characteristics degradation; MOSFET; SILC conduction; hard breakdown; interface degradation; interface trap generation; low frequency noise degradation; oxide defects; oxide degradation; oxide trap generation; saturation current; soft breakdown; stress induced drain current noise; stress induced leakage current; threshold voltage; transconductance; Breakdown voltage; Character generation; DC generators; Degradation; Low-frequency noise; MOSFETs; Noise generators; Stress; Threshold voltage; Transconductance;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256869
