180 GHz f/sub T/ and f/sub max/ self-aligned SiGeC HBT using selective epitaxial growth of the base

Author

Chevalier, P. ; Fellous, C. ; Martinet, B. ; Leverd, F. ; Saguin, F. ; Dutartre, D. ; Chantre, A.

Author_Institution

STMicroelectronics, Crolles, France

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

299

Lastpage

302

Abstract

This paper describes the device optimization work done with the study of carbon incorporation into the SiGe base of a bipolar deposited by selective epitaxy. First the bipolar fabrication is addressed. Effects of carbon on electrical characteristics are then discussed. The performance of a bipolar transistor, using an optimal carbon profile derived from a design of experiments, is presented. A 180 GHz f/sub T/ and f/sub max/ bipolar device with a BVceo of 1.7 V is demonstrated. It is to the authors´ knowledge the best-balanced f/sub T//f/sub max/ performance reported for a fully self-aligned SiGeC HBT using a selective epitaxial base.

Keywords

design of experiments; epitaxial growth; germanium compounds; heterojunction bipolar transistors; millimetre wave bipolar transistors; optimisation; silicon compounds; wide band gap semiconductors; 1.7 V; 180 GHz; DOE; SiGeC; base selective epitaxial growth; carbon incorporation; carbon profile; design of experiments; device optimization; self-aligned HBT; Boron; CMOS technology; Carbon dioxide; Epitaxial growth; Etching; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; US Department of Energy;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256873

Filename

1256873