Title :
Modeling of SiGe power HBT intermodulation distortion using HICUM
Author :
Sakalas, P. ; Schröter, M. ; Kornau, L. ; Kraus, W. ; Herricht, J.
Author_Institution :
Dresden Univ. of Technol., Germany
Abstract :
Single- and two-tone power characteristics of "true" Si/SiGe HBTs were measured with fundamental frequencies up to 5 GHz. For obtaining accurate information on harmonic and, in particular, intermodulation distortion, careful de-embedding of parasitics was performed using a three-step method. HICUM simulations show good agreement with measured data.
Keywords :
harmonic distortion; heterojunction bipolar transistors; intermodulation distortion; power bipolar transistors; semiconductor device measurement; semiconductor device models; 5 GHz; HICUM simulation; IMD; Si-SiGe; harmonic distortion; intermodulation distortion; parasitics de-embedding; power HBT; single-power characteristics; two-tone power characteristics; Distortion measurement; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Intermodulation distortion; Parameter extraction; Power measurement; Power transistors; Signal processing; Silicon germanium;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256876
