DocumentCode
2442222
Title
EFG manufacturing line technical progress and module cost reductions under the PVMaT program
Author
Cao, J. ; Gonsiorawski, R. ; Kardauskas, M. ; Kalejs, J. ; O´brien, C. ; Prince, M. ; Tornstrom, E.
Author_Institution
ASE Americas Inc., Billerica, MA, USA
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
1077
Lastpage
1080
Abstract
The authors describe here the progress made in the Phase 4A2 PVMaT program carried out at ASE Americas on technology improvements for module manufacturing cost reductions of edge-defined film-fed growth (EFG) wafer-based photovoltaic products. This work is directed at tasks necessary for cost effective scaling up of EFG technology from the current 4 MW and toward meeting long term high volume manufacturing goals and cost targets of around $1/W. Current PVMaT program objectives are to lower costs through: yield improvements in crystal growth and laser cutting; reduction of EFG solar cell thickness from 300 to 250 microns; raising of the average cell efficiency from 13.5% to 15% through manufacturing line improvements and new technology introduction; reduction of environmental waste in cell processing; and simplification of processes and reduction of costs in the cell interconnect and module assembly area. The authors discuss in detail the cost reductions achieved to date
Keywords
crystal growth from melt; project engineering; semiconductor device manufacture; semiconductor growth; solar cells; 4 MW; PVMaT project; Phase 4A2; cell interconnect; crystal growth; edge-defined film-fed growth; environmental waste reduction; high volume manufacturing; laser cutting; manufacturing line improvements; module assembly; new technology introduction; photovoltaic products; solar cell thickness; Casting; Costs; Crystallization; Manufacturing automation; Manufacturing processes; Photovoltaic systems; Production; Research and development; Silicon; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654274
Filename
654274
Link To Document