DocumentCode :
2442298
Title :
Efficient two-write WOM-codes
Author :
Yaakobi, Eitan ; Kayser, Scott ; Siegel, Paul H. ; Vardy, Alexander ; Wolf, Jack K.
Author_Institution :
Univ. of California, San Diego, La Jolla, CA, USA
fYear :
2010
fDate :
Aug. 30 2010-Sept. 3 2010
Firstpage :
1
Lastpage :
5
Abstract :
A Write Once Memory (WOM) is a storage medium with binary memory elements, called cells, that can change from the zero state to the one state only once. Examples of WOMs are punch cards, optical disks, and more recently flash memories. A t-write WOM-code is a coding scheme for storing t messages in n cells in such a way that each cell can change its value only from the zero state to the one state. The WOM-rate of a t-write WOM-code is the ratio of the total amount of information written to the WOM in t writes to the number of cells. In this paper we present a family of 2-write WOM-codes. It is shown how to construct from each linear code C a 2-write WOM-code. Then, we find 2-write WOM-codes that improve the best known WOM-rate with two writes. This scheme is proved to be capacity achieving when the parity check matrix of the linear code C is chosen uniformly at random. Finally, we show how to take advantage of 2-write WOM-codes in order to construct codes for the Blackwell channel.
Keywords :
linear codes; Blackwell channel; WOM code; binary memory element; coding scheme; flash memory; linear code; parity check matrix; storage medium; write once memory; Artificial neural networks; Ash; Decoding; Linear code; Parity check codes; Receivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Theory Workshop (ITW), 2010 IEEE
Conference_Location :
Dublin
Print_ISBN :
978-1-4244-8262-7
Electronic_ISBN :
978-1-4244-8263-4
Type :
conf
DOI :
10.1109/CIG.2010.5592956
Filename :
5592956
Link To Document :
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