DocumentCode
2442335
Title
Quantifying a simple antenna design rule
Author
Gabriel, Calvin T. ; De Muizon, Emmanuel
Author_Institution
Philips Semicond., San Jose, CA, USA
fYear
2000
fDate
2000
Firstpage
153
Lastpage
156
Abstract
Charging damage from plasma processing can be reduced through process architecture and plasma hardware and process optimization, but not all damage can be prevented. Antenna area ratio design rules are commonly used in the semiconductor industry to ensure that the remaining charging does not damage circuits. A procedure for defining and quantifying simple antenna design rules is shown in this paper. In a case study, poly and metal antenna area ratios of 300:1 are chosen as the design rule maximum. The limitations of these design rules are also discussed
Keywords
CMOS integrated circuits; antennas in plasma; charge injection; plasma materials processing; antenna area ratio; antenna design rule; charging damage; plasma hardware; plasma processing; process architecture; process optimization; CMOS technology; Conductors; Electronics industry; Hardware; Integrated circuit interconnections; Plasma applications; Plasma materials processing; Process design; Routing; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location
Santa Clara, CA
Print_ISBN
0-9651577-4-1
Type
conf
DOI
10.1109/PPID.2000.870654
Filename
870654
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