• DocumentCode
    2442335
  • Title

    Quantifying a simple antenna design rule

  • Author

    Gabriel, Calvin T. ; De Muizon, Emmanuel

  • Author_Institution
    Philips Semicond., San Jose, CA, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    153
  • Lastpage
    156
  • Abstract
    Charging damage from plasma processing can be reduced through process architecture and plasma hardware and process optimization, but not all damage can be prevented. Antenna area ratio design rules are commonly used in the semiconductor industry to ensure that the remaining charging does not damage circuits. A procedure for defining and quantifying simple antenna design rules is shown in this paper. In a case study, poly and metal antenna area ratios of 300:1 are chosen as the design rule maximum. The limitations of these design rules are also discussed
  • Keywords
    CMOS integrated circuits; antennas in plasma; charge injection; plasma materials processing; antenna area ratio; antenna design rule; charging damage; plasma hardware; plasma processing; process architecture; process optimization; CMOS technology; Conductors; Electronics industry; Hardware; Integrated circuit interconnections; Plasma applications; Plasma materials processing; Process design; Routing; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 2000 5th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-9651577-4-1
  • Type

    conf

  • DOI
    10.1109/PPID.2000.870654
  • Filename
    870654