Title :
A simple method for automated extraction of BJT thermal resistance from Early voltage measurements
Author :
Sadovnikov, Alexei ; Krakowski, Tracey ; Greig, Wendy ; Xu, Mingwei
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
We present a methodology for thermal resistance R/sub TH/ extraction from the Early voltage dependence on collector current. This method does not require pulsed, temperature, or frequency measurements and hence, can be easily automated. Results for a BJT from an SOI/DTI complementary BiCMOS process and for a SiGe HBT from a 50 GHz BiCMOS process are presented and comparison to SPICE simulations is made.
Keywords :
bipolar transistors; semiconductor device measurement; semiconductor device models; thermal resistance measurement; voltage measurement; 50 GHz; BJT thermal resistance automated extraction; Early voltage measurements; HBT; SOI/DTI complementary BiCMOS process; SiGe; collector current Early voltage dependence; BiCMOS integrated circuits; Diffusion tensor imaging; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Pulse measurements; Silicon germanium; Temperature measurement; Thermal resistance; Voltage measurement;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256883
