DocumentCode
2442411
Title
Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process
Author
Carrere, J.-P. ; Oberlin, J.C. ; Haond, M.
Author_Institution
Centre of Commun., CNET STMicroelectronics, Crolles, France
fYear
2000
fDate
2000
Firstpage
164
Lastpage
167
Abstract
This paper presents the influence of topographical parameters such as antenna area, perimeter and aspect ratio, on charging during an ICP oxide deposition process. We show that an extended electron-shading occurs during the beginning of the deposition. Moreover, we present a new phenomenon of drastic damaging when thin oxide layers are deposited. We attribute this to an electron current transient at the wafer dechuck in the ICP chamber
Keywords
dielectric thin films; plasma CVD; silicon compounds; SiO2; antenna area; aspect ratio; charging; electron current transient; electron-shading; inductively coupled plasma CVD; oxide deposition; thin oxide layers; topographical parameters; Degradation; Etching; MOS devices; Plasma applications; Plasma chemistry; Plasma density; Plasma sources; Plasma temperature; Radio frequency; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location
Santa Clara, CA
Print_ISBN
0-9651577-4-1
Type
conf
DOI
10.1109/PPID.2000.870659
Filename
870659
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