Title :
Electrical properties of MOCVD praseodymium oxide based MOS structures
Author :
Nigro, R. Lo ; Toro, R. ; Malandrino, G. ; Raineri, V. ; Fragalà, I.L.
Author_Institution :
IMM, CNR, Catania, Italy
Abstract :
Praseodymium oxide-based high k dielectric thin films grown by metal-organic chemical vapour deposition (MOCVD) at 750/spl deg/C on p-type Si (100) substrates have been proposed. It has been revealed by energy-filtered TEM analyses that depositions in 10/sup -3/ torr oxygen partial pressure produced a Pr/sub 2/O/sub 3/ and a Pr/sub n/O/sub 2n-2//spl middot/SiO/sub 2/ bottom layer. The electrical properties of both Pr/sub 2/O/sub 3//Pr/sub n/O/sub 2n-2//spl middot/SiO/sub 2/ structures and Pr/sub n/O/sub 2n-2//spl middot/SiO/sub 2/ thin layers have been investigated and compared.
Keywords :
MIS structures; MOCVD coatings; dielectric thin films; leakage currents; praseodymium compounds; 10/sup -3/ torr; 750 degC; MOCVD; Pr/sub 2/O/sub 3/-SiO/sub 2/-Si; energy-filtered TEM; high k dielectric thin films; leakage current density; metal-organic chemical vapour deposition; p-type Si (100) substrates; praseodymium oxide based MOS structures; Capacitance; Chemical vapor deposition; Dielectric materials; Dielectric substrates; Dielectric thin films; Electrons; High K dielectric materials; High-K gate dielectrics; MOCVD; Semiconductor materials;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256892
