Title :
An integrated 0.35µm CMOS technology inductor for wideBand LNA application
Author :
Ben Amor, M. ; Loulou, M. ; Quintanel, S. ; Pasquet, D.
Author_Institution :
Dept. of Electr. Eng., Nat. Eng. Sch. of Sfax, Sfax, Tunisia
Abstract :
This paper presents the design of an integrated inductor with AMS CMOS 0.35 mum technology. This inductor is designed to ensure the wide band LNA circuit implementation on silicon. This inductor is designed with a coplanar transmission line. This line type achieves an inductance value of 0.38 nH on the whole operating frequency band from 2 to 6 GHz.
Keywords :
CMOS analogue integrated circuits; coplanar transmission lines; elemental semiconductors; field effect MIMIC; microwave amplifiers; millimetre wave amplifiers; silicon; wideband amplifiers; AMS CMOS technology; Si; circuit implementation; coplanar transmission line; frequency 2 GHz to 6 GHz; integrated inductor; silicon; size 0.35 mum; wideband LNA; CMOS technology; Coplanar transmission lines; Coplanar waveguides; Distributed parameter circuits; Frequency; Inductors; Integrated circuit technology; Microstrip; Substrates; Wideband; CMOS technology; Integrated inductance; transmission line; wide band LNA;
Conference_Titel :
Telecommunications, 2009. ICT '09. International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-2936-3
Electronic_ISBN :
978-1-4244-2937-0
DOI :
10.1109/ICTEL.2009.5158665
