Title :
Modelling and simulating the selective epitaxial growth of silicon under consideration of anisotropic growth rates
Author :
Spallek, Rainer G. ; Temmler, Dietmar ; Preusser, T. ; Ronsch, T. ; Ulbrich, Stefan
Author_Institution :
Dept. of Comput. Eng., Dresden Univ. of Technol., Germany
Abstract :
This work presents a new model for the simulation of thin layer deposition and etching processes. Especially suited for the simulation of highly anisotropic processes, the frontier model is introduced in the context of selective epitaxial growth of silicon. The general approach to this new simulation model is described, and the simulation of selective epitaxial growth is validated against experimental results.
Keywords :
elemental semiconductors; epitaxial growth; semiconductor process modelling; silicon; Si; anisotropic growth rates; anisotropic processes; frontier model; silicon selective epitaxial growth; thin layer deposition; thin layer etching; Anisotropic magnetoresistance; Atmospheric modeling; Computational modeling; Context modeling; Epitaxial growth; Etching; Random access memory; Semiconductor process modeling; Silicon; Transistors;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256895
