Development of viscous PR flow technology for 0.26 /spl mu/m contact pitch on 0.84 /spl mu/m/sup 2/ SRAM cell [photoresist flow]

Author

Hwang, B.J. ; Koh, K. ; Jung, W.Y. ; Kim, Tae Kyun ; Kwak, K.H. ; Son, Young Seop ; Jang, Ji Hoon ; Kim, Hak S. ; Jung, S.M.

Author_Institution

Semicond. R&D Center, Samsung Electron. Co., Ltd., Kyunggi-Do, South Korea

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

391

Lastpage

394

Abstract

The PR (photoresist) flow process for small contact patterning is difficult to predict and optimize because it is sensitively affected by the process condition, pattern density and environment as well. In this paper, a model of viscous flow by surface tension for the PR flow process was presented and the 3D transient flow simulation using CFD-ACE+ (computational fluid dynamics software) was introduced. In the simulation, the effect of temperature on the PR flow and the direction of PR flow by contact size, shape, and surrounding bulk density were taken into account. By using the combined results of PR flow simulation and additional lithography simulation by the Solid-C program, enabled a realization of a uniform contact shape in various environments on a 0.84 /spl mu/m/sup 2/ SRAM cell. This process sequence widened process tolerance on device integration and exhibited an improved contact resistance distribution and reduced junction leakage current.

Keywords

SRAM chips; computational fluid dynamics; flow simulation; photoresists; plastic flow; semiconductor process modelling; surface tension; 0.26 micron; 3D transient flow simulation; PR flow process; SRAM cell contact pitch; computational fluid dynamics; contact resistance distribution; junction leakage current; lithography simulation; pattern density; process tolerance; small contact patterning; surface tension; uniform contact shape; viscous photoresist flow technology; Computational fluid dynamics; Computational modeling; Contact resistance; Lithography; Random access memory; Resists; Shape; Solid modeling; Surface tension; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256896

Filename

1256896