Title :
Carrier quantization in SOI MOSFETs using an effective potential based Monte-Carlo tool
Author :
Palestri, P. ; Esseni, D. ; Abramo, A. ; Clerc, R. ; Selmi, L.
Author_Institution :
DIEGM, Udine, Italy
Abstract :
This paper discusses the numerical implementation and assesses the validity limits of the effective potential approach used to include quantum mechanical effects in semi-classical full-band Monte Carlo simulations. Results on thin-body fully-depleted SOI MOSFETs are reported. It is shown that the model grasps with reasonable accuracy the quantum mechanical reduction of the inversion charge, but fails to provide an accurate description of the charge distribution in the proximity of the Si/SiO/sub 2/ barrier.
Keywords :
MOSFET; Monte Carlo methods; quantum theory; semiconductor device models; silicon-on-insulator; SOI MOSFET carrier quantization; Si-SiO/sub 2/; barrier proximity charge distribution; effective potential method; fully-depleted MOSFET; inversion charge; potential based Monte-Carlo tool; quantum mechanical effects; semi-classical full-band Monte Carlo simulation; thin-body MOSFET; Electron devices; Electrostatics; MOSFETs; Monte Carlo methods; Particle scattering; Poisson equations; Potential energy; Quantization; Quantum mechanics; Smoothing methods;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256900
