Carrier quantization in SOI MOSFETs using an effective potential based Monte-Carlo tool

Author

Palestri, P. ; Esseni, D. ; Abramo, A. ; Clerc, R. ; Selmi, L.

Author_Institution

DIEGM, Udine, Italy

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

407

Lastpage

410

Abstract

This paper discusses the numerical implementation and assesses the validity limits of the effective potential approach used to include quantum mechanical effects in semi-classical full-band Monte Carlo simulations. Results on thin-body fully-depleted SOI MOSFETs are reported. It is shown that the model grasps with reasonable accuracy the quantum mechanical reduction of the inversion charge, but fails to provide an accurate description of the charge distribution in the proximity of the Si/SiO/sub 2/ barrier.

Keywords

MOSFET; Monte Carlo methods; quantum theory; semiconductor device models; silicon-on-insulator; SOI MOSFET carrier quantization; Si-SiO/sub 2/; barrier proximity charge distribution; effective potential method; fully-depleted MOSFET; inversion charge; potential based Monte-Carlo tool; quantum mechanical effects; semi-classical full-band Monte Carlo simulation; thin-body MOSFET; Electron devices; Electrostatics; MOSFETs; Monte Carlo methods; Particle scattering; Poisson equations; Potential energy; Quantization; Quantum mechanics; Smoothing methods;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256900

Filename

1256900