DocumentCode :
2442711
Title :
A monolithic high modulation efficiency CMOS laser diode / modulator driver
Author :
Liang, Bangli ; Chen, Dianyong ; Wang, Bo ; Situ, Guohui ; Kwasniewski, Tad ; Wang, Zhigong
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
fYear :
2009
fDate :
25-27 May 2009
Firstpage :
361
Lastpage :
363
Abstract :
A high modulation efficiency laser diode/modulator driver (LDD/MD) is designed for low-cost optical access networks using shunt peaking active inductors and direct-coupled topology to boost the bandwidth, to improve modulation efficiency, and to reduce the silicon area. It provides a maximum modulation current of 74 mA or a maximum modulation voltage of 3.9 V through an equivalent 50 Omega load. Fully-open optical eye diagrams were observed at bit rate up to 1.25-Gb/s when it used as a LDD or a MD. The maximum RMS jitter is 38 ps. The 0.4 mm2 chip consumes only 470 mW in 5 V 0.6 mum standard CMOS.
Keywords :
CMOS integrated circuits; driver circuits; elemental semiconductors; integrated optics; optical fibre communication; optical modulation; optical transmitters; semiconductor lasers; silicon; CMOS laser diode; direct-coupled topology; modulation current; modulator driver; monolithic high modulation efficiency; optical eye diagrams; silicon area; size 0.6 mum; voltage 5 V; Active inductors; Bandwidth; Diode lasers; Network topology; Optical design; Optical fiber networks; Optical modulation; Shunt (electrical); Silicon; Voltage; CMOS; High Modulation Efficiency; Laser Diode / Modulator drive; Monolithic;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Telecommunications, 2009. ICT '09. International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-2936-3
Electronic_ISBN :
978-1-4244-2937-0
Type :
conf
DOI :
10.1109/ICTEL.2009.5158674
Filename :
5158674
Link To Document :
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