Integrating ´atomistic´, intrinsic parameter fluctuations into compact model circuit analysis

MOSFET parameter fluctuations, resulting from the ´atomistic´ granular nature of matter, are predicted to be a critical roadblock to the scaling of devices in future electronic systems. A methodology is presented which allows compact model based circuit analysis tools to exploit the results of ´atomistic´ device simulation, allowing investigation of the effects of such fluctuations on circuits and systems. The methodology is applied to a CMOS inverter, ring oscillator, and analogue NMOS current mirror as simple initial examples of its efficacy.