Title :
Subthreshold region conduction and 1/f noise empirical models in N-MOSFETs
Author :
Pichon, L. ; Routoure, J.M. ; Carin, R. ; Mekwama, L. Nze
Author_Institution :
GREYC, ENSICAEN, Caen Univ., France
Abstract :
Temperature dependence measurements of the subthreshold current are performed in MOSFETs and show that this current is well described by the Meyer-Neldel effect. A low-frequency noise model, based on carrier fluctuations including this effect, is established to describe the noise in the subthreshold region. This model leads to the qualification of several technologies and particularly to the extraction of the oxide state density.
Keywords :
1/f noise; MOSFET; semiconductor device measurement; semiconductor device models; semiconductor device noise; 1/f noise empirical model; Meyer-Neldel effect; N-MOSFET; carrier fluctuations; low-frequency noise model; oxide state density extraction; subthreshold current; temperature dependent subthreshold region conduction; Current measurement; Fluctuations; Lead compounds; Low-frequency noise; MOSFET circuits; Performance evaluation; Qualifications; Subthreshold current; Temperature dependence; Temperature measurement;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256909
