Title :
Analytical model for quantum well to quantum dot tunneling
Author :
Clerc, Raphaël ; Ghibaudo, Gérard ; Pananakakis, Georges
Author_Institution :
IMEP, ENSERG, Grenoble, France
Abstract :
This paper presents an analytical model of elastic tunneling from a quantum well to a quantum dot, applicable to the modeling of single electron transistor and memory charging. The main differences between tunneling to a quantum dot and to a continuum of states have been carefully addressed. The impact of quantum decoherence factors such as temperature and dot size dispersion have also been investigated.
Keywords :
Coulomb blockade; semiconductor quantum dots; semiconductor quantum wells; single electron transistors; tunnelling; two-dimensional electron gas; 0D quantum dot; 2D electron gas; Coulomb blockade effects; continuum of states; dot quantization; dot size dispersion; elastic tunneling; memory charging; quantum decoherence factors; quantum well/quantum dot tunneling; single electron transistor; Analytical models; Effective mass; Physics; Quantum dot lasers; Quantum dots; Quantum mechanics; Single electron transistors; Temperature; Tunneling; US Department of Transportation;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256913
