C-V characterization of MOS capacitors on high resistivity silicon substrate

This work reports on an investigation of capacitance-voltage (C-V) measurement of metal-oxide-semiconductor (MOS) capacitors on high resistivity silicon (HRS) used as substrate for radio-frequency (RF) integrated circuits. C-V MOS-capacitor characteristics differ considerably from those on low-resistivity silicon (LRS) due to potential drop in the substrate and large Debye length. Modeling of the substrate by a simple network of parallel resistors and capacitors is found to be insufficient at high frequencies in HRS. Medici simulations confirm the conclusions.