Title :
A C-band 25 watt linear power FET
Author :
Taniguchi, Y. ; Hasegawa, Y. ; Aoki, Y. ; Fukaya, J.
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
Abstract :
A novel four-way power combiner/divider based on 1/8-wavelength transmission line consideration is applied to the design of internally matched GaAs FETs. The resultant FET delivers an output power at 1-dB gain compression point of 44 dBm (25 W) with 12-dB linear gain, 40% power added efficiency, and -46-dBc third-order intermodulation distortion at an output power of 35 dBm (single carrier level) over the 4.4- to 5.0-GHz frequency range.<>
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; waveguide components; 1/8-wavelength transmission line; 12 dB; 25 W; 4.4 to 5 GHz; 40 percent; C-band; GaAs; four-way power combiner/divider; internally matched GaAs FETs; linear gain; linear power FET; output power; power added efficiency; third-order intermodulation distortion; Circuits; Dielectric substrates; Gain; Gallium arsenide; Impedance; Intermodulation distortion; Microwave FETs; Power amplifiers; Power combiners; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99743
