Title :
A 0.25 /spl mu/m SiGe BiCMOS technology including integrated RF passive components optimised for low power applications
Author :
Van Huylenbroeck, S. ; Jenei, S. ; Carchon, G. ; Piontek, A. ; Vleugels, F. ; Decoutere, S.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A high performance SiGe HBT has been integrated in a 0.25 /spl mu/m BiCMOS technology optimised for low power applications. A deep trench module is implemented, offering a reduction of the perimeter collector-substrate capacitance by a factor of 5 while at the same time maintaining the wafer surface topography. The in-situ boron doped SiGe profile has been optimised towards a reduction of the base-emitter capacitance. High-quality, low-cost passive components like varactors, high-Q post-processed inductors and highly linear nondispersive MIM capacitors are offered, broadening the low power capabilities of this technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MIM devices; boron; heterojunction bipolar transistors; isolation technology; low-power electronics; semiconductor materials; thin film inductors; varactors; 0.25 micron; BiCMOS technology; HBT; MOS varactor structures; SiGe:B; base-emitter capacitance; deep trench module; high-Q post-processed inductors; in-situ boron doped SiGe profile; integrated RF passive components; linear nondispersive MIM capacitors; low power optimization; perimeter collector-substrate capacitance; thin-film inductors; wafer surface topography; BiCMOS integrated circuits; Boron; Capacitance; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Radio frequency; Silicon germanium; Surface topography; Varactors;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256924
